Improved performance of InP-based 2.1 mu m InGaAsSb quantum well lasers using Sb as a surfactant
Author(s): Wang, DB (Wang, Dongbo); Zhuo, N (Zhuo, Ning); Zhao, Y (Zhao, Yue); Cheng, FM (Cheng, Fengmin); Niu, SZ (Niu, Shouzhu); Zhang, JC (Zhang, Jinchuan); Zhai, SQ (Zhai, Shenqiang); Wang, LJ (Wang, Lijun); Liu, SM (Liu, Shuman); Liu, FQ (Liu, Fengqi); Wang, ZG (Wang, Zhanguo)
Source: APPLIED PHYSICS LETTERS Volume: 113 Issue: 25 Article Number: 251101 DOI: 10.1063/1.5060653 Published: DEC 17 2018
Abstract: We demonstrate significantly enhanced performance of 2.1 mu m InGaAsSb quantum well lasers using Sb as a surfactant. The lasers are grown on an InP substrate by metal-organic vapor-phase epitaxy. Following the introduction of Sb, a double-channel waveguide laser, with uncoated facets, shows a remarkably increased continuous-wave output power of 330 mW, compared with 160 mW for a Sb-free InGaAs quantum well laser, measured at 10 degrees C. Moreover, the introduction of Sb improves the temperature performance of the device and doubles its wall-plug efficiency. In addition, the active region material and interface quality are investigated by transmission electron microscopy, which help to elucidate the basic physical mechanism of the Sb surfactant effect. Published by AIP Publishing.