360彩票老时时彩
Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring a...
AlGaN/GaN Heterojunction Bipolar Transistor With Selective-Area Grown Emi...
Low-Temperature Fabrication of Wafer-Bonded Ge/Si p-i-n Photodiodes by La...
Large photoluminescence enhancement in mechanical-exfoliated one-dimensio...
Performance Enhancement of Graphene Photodetectors via In Situ Preparatio...
High quality 2-mu m GaSb-based optically pumped semiconductor disk laser ...
High quantum efficiency long-/long-wave dual-color type-II InAs/GaSb infr...
Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet...
Localization trajectory and Chern-Simons axion coupling for bilayer quant...
Carrier Redistribution Between Two Kinds of Localized States in the InGaN...
官方微信
友情鏈接

Improved performance of InP-based 2.1 mu m InGaAsSb quantum well lasers using Sb as a surfactant

2019-03-29

Author(s): Wang, DB (Wang, Dongbo); Zhuo, N (Zhuo, Ning); Zhao, Y (Zhao, Yue); Cheng, FM (Cheng, Fengmin); Niu, SZ (Niu, Shouzhu); Zhang, JC (Zhang, Jinchuan); Zhai, SQ (Zhai, Shenqiang); Wang, LJ (Wang, Lijun); Liu, SM (Liu, Shuman); Liu, FQ (Liu, Fengqi); Wang, ZG (Wang, Zhanguo)
Source: APPLIED PHYSICS LETTERS Volume: 113 Issue: 25 Article Number: 251101 DOI: 10.1063/1.5060653 Published: DEC 17 2018
Abstract: We demonstrate significantly enhanced performance of 2.1 mu m InGaAsSb quantum well lasers using Sb as a surfactant. The lasers are grown on an InP substrate by metal-organic vapor-phase epitaxy. Following the introduction of Sb, a double-channel waveguide laser, with uncoated facets, shows a remarkably increased continuous-wave output power of 330 mW, compared with 160 mW for a Sb-free InGaAs quantum well laser, measured at 10 degrees C. Moreover, the introduction of Sb improves the temperature performance of the device and doubles its wall-plug efficiency. In addition, the active region material and interface quality are investigated by transmission electron microscopy, which help to elucidate the basic physical mechanism of the Sb surfactant effect. Published by AIP Publishing.
全文鏈接:https://aip.scitation.org/doi/full/10.1063/1.5060653



關于我們
下載視頻觀看
聯系方式
通信地址

北京市海淀區清華東路甲35號 北京912信箱 (100083)

電話

010-82304210/010-82305052(傳真)

E-mail

[email protected]

交通地圖
版權所有 ? 中國科學院半導體研究所

備案號:京ICP備05085259號 京公網安備110402500052 中國科學院半導體所聲明

360彩票老时时彩